BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application

HfO 2 -based metal-ferroelectric-metal (MFM) ferroelectric tunnel junction (FTJ) with the low operating voltage (± 1.5 V) has been fabricated by simple process steps with a low thermal budget (≤ 450 °C). It enables a better read current level and a lower operating voltage compared with its metal-fer...

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Bibliographic Details
Published in2022 International Conference on IC Design and Technology (ICICDT) pp. 5 - 7
Main Authors Jiao, Leming, Zhou, Zuopu, Zheng, Zijie, Kang, Yuye, Sun, Chen, Kong, Qiwen, Wang, Xiaolin, Zhang, Dong, Liu, Gan, Liu, Long, Gong, Xiao
Format Conference Proceeding
LanguageEnglish
Published IEEE 21.09.2022
Subjects
BEOL-compatible
Integrated circuit interconnections
low operating voltage
Low voltage
MFM FTJ
Micromechanical devices
Nonvolatile memory
Power demand
Three-dimensional displays
Voltage
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Summary:HfO 2 -based metal-ferroelectric-metal (MFM) ferroelectric tunnel junction (FTJ) with the low operating voltage (± 1.5 V) has been fabricated by simple process steps with a low thermal budget (≤ 450 °C). It enables a better read current level and a lower operating voltage compared with its metal-ferroelectric-insulator-semiconductor (MFIS) competitors, which means a reduction in the power consumption on the premise of readability. Moreover, long retention and acceptable endurance for non-volatile memory are demonstrated. With these advantages, our device shows great potential for monolithic 3D integration with the CMOS circuits in low-power storage or in-memory computing applications.
ISSN:2691-0462
DOI:10.1109/ICICDT56182.2022.9933091