Octa multibit upset correction in SRAM memories using interleaved MPC code

• Published in: International journal of information technology (Singapore. Online) Vol. 17; no. 6; pp. 3519 - 3525
• Main Authors: Sindhu, T. V., Devi, P. Kalpana
• Format: Journal Article
• Language: English
• Published: Singapore Springer Nature Singapore 01.07.2025; Springer Nature B.V
• Subjects: Artificial Intelligence; Coders; Computer Imaging; Computer Science; Cosmic rays; Decoders; Decoding; Error correction; Image Processing and Computer Vision; Machine Learning; Original Research; Parity; Pattern Recognition and Graphics; Radiation effects; Redundancy; Software Engineering; Static random access memory; Vision; Error correction codes; SRAM memory; Multiple cell upset; Parity code
• ISSN: 2511-2104; 2511-2112
• DOI: 10.1007/s41870-025-02468-2

In space applications, cosmic radiation-induced multiple cells upset (MCU) poses a major stability issue for static random-access memory (SRAM). During the past decade, radiation-induced MCUs have been responsible for a significant increase in the proportion of mistakes affecting multiple memory cells. This research proposes an Interleave Multibit Parity Code (IMPC) for Octa multibit upset correction in SRAM, achieving low latency and error rates. The IMPC technique predicts MCUs before decoding and corrects adjacent 8-bit errors effectively, utilizing a parity-check matrix with minimal redundancy. Additionally, the encoder is reused to reduce overhead without interfering with the encoding and decoding process by reducing the area overhead of additional circuits. With the 45-nm library, encoders and decoders can be constructed with a minimal amount of area and delay overhead. Experimental results shows that the proposed code is more area-efficient, faster, and more power-efficient than current ECC codes.