Ultrathin-barrier AlGaN/GaN heterostructure: An AlGaN-recess-free technology for fabrication of lateral GaN-based power devices

An AlGaN-recess-free, ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure passivated with a charge-modulation SiN x passivation layer, is proposed for fabrication of GaN-based enhancement- and depletion-mode high-electron-mobility transistors (HEMTs), and heterojunction-based power rectifier...

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Bibliographic Details
Published in2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 393 - 395
Main Authors Huang, Sen, Wang, Xinhua, Jiang, Qimeng, Guo, Fuqiang, Liu, Xinyu
Format Conference Proceeding
LanguageEnglish
Published IEEE 06.03.2022
Subjects
AlGaN/GaN heterostructure
Fabrication
HEMTs
Integrated circuits
LPCVD-SiN x
Power Device
Radio frequency
Recess-free
Rectifiers
Silicon
Ultrathin-barrier
Wide band gap semiconductors
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Summary:An AlGaN-recess-free, ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure passivated with a charge-modulation SiN x passivation layer, is proposed for fabrication of GaN-based enhancement- and depletion-mode high-electron-mobility transistors (HEMTs), and heterojunction-based power rectifiers on GaN-on-Si platform. The UTB-AlGaN/GaN heterostructure is an attractive technology platform for on-chip integration of power devices with power-driven circuits for GaN-based smart power ICs.
DOI:10.1109/EDTM53872.2022.9797960