Single-mode waveguides with well and barrier type on YSGG crystals formed via hydrogen ion irradiation

• Published in: Applied surface science Vol. 681; p. 161476
• Main Authors: Wang, Tiejun, Qiao, Mei, Liu, Yong, Tian, Meng, Wang, Xiaoxin, Li, Xin, Xu, Shicai
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.2025
• Subjects: Ion irradiation; Optoelectronic materials; Waveguide; YSGG crystal; Optoelectronic materials; Ion irradiation; Waveguide; YSGG crystal
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2024.161476

[Display omitted] •A typical “well + barrier” type waveguide structure was created in YSGG crystal irradiated by ion irradiation process.•Little damage was induced by H ion irradiation in near-surface region, which is beneficial for light-wave propagation.•Irradiated YSGG presents potential for applications in waveguide lasers and highly sensitive optoelectronic sensors. Low-damage single-mode waveguide structure with enhanced index well and buried barrier in YSGG crystal using 300 keV H ion irradiation with a fluence of 5.6 × 1016 ions/cm2 was fabricated in this work. The displacement per atom, elastic collisions between the irradiated ions and target nuclei were calculated using SRIM. The characteristic of guided wave in YSGG crystal (dark mode characteristic curve and near field intensity profile) were measured by prism coupling and end face coupling method at 633 nm wavelength. A typical “well + barrier” type waveguide structure was created in YSGG crystal irradiated by ions irradiation process. The absorption and Raman spectra of YSGG crystal irradiated by 300 keV H ion with a fluence of 5.6 × 1016 ions/cm2 were measured. The fabricated YSGG waveguide structure shows potential application for waveguide lasers, amplifiers, and optoelectronic sensors with exceptional sensitivity.