Self-powered photoelectrochemical solar-blind UV photodetector with enhanced responsivity SnO2 nanosheets-Ti3C2Tx

• Published in: Surfaces and interfaces Vol. 52; p. 104851
• Main Authors: Ye, Qiannan, Chen, Haoyan, Yao, Rihui, Su, Guoping, Yang, Yuexin, Li, Muyun, Zhang, Kangping, Guo, Chenxiao, Ning, Honglong, Peng, Junbiao
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.09.2024
• Subjects: Photoelectrochemical; Self-powered; SnO2 NSs-Ti3C2Tx; Solar-blind; UV PD; Self-powered; SnO2 NSs-Ti3C2Tx; UV PD; Photoelectrochemical; Solar-blind
• ISSN: 2468-0230
• DOI: 10.1016/j.surfin.2024.104851

Photoelectrochemical solar-blind UV photodetectors (PEC SBUV PDs) have attracted more and more attention due to their high sensitivity and simple preparation process. In this paper, a self-powered PEC SBUV PD based on SnO2 nanosheets-Ti3C2Tx is prepared. The detector shows better performance than that based on bare SnO2 nanosheets (NSs) due to the formation of Schottky contacts between SnO2 NSs-Ti3C2Tx, which enhances the photogenerated hole-electron separation and reduces the complexation of carriers at the interface. The effect of different concentrations of Ti3C2Tx on UV photodetectors is systematically investigated. The SnO2 NSs-0.1Ti3C2Tx PEC SBUV PD exhibits good self-powered performance with a responsivity (R) of 4.25 × 10–3 A/W, a fast response time of 24.5/28.3 ms at 0 V under 265 nm irradiation, and a solar-blind/visible rejection ratios (R265 nm/R420 nm) of about 308.7. The R is up to 1.67 × 10–2 A/W with a specific detectivity (D*) of about 1.55 × 1010 Jones at 0.4 V. This self-powered photodetector is a promising candidate for high-sensitivity, high-speed UV detection applications.