High repeatability UV flexible photodetector based on AlInN film prepared by sputtering

• Published in: Vacuum Vol. 230; p. 113634
• Main Authors: Xue, Shuo, Chen, Wanlei, Zhou, Ouxiang, Han, Mengyao, Qi, Dongli, Li, Quanjun, Zhu, Xiaotian, Shen, Longhai
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2024
• Subjects: AlInN film; High repeatability; Photoresponse performance; UV flexible photodetector; AlInN film; UV flexible photodetector; High repeatability; Photoresponse performance
• ISSN: 0042-207X
• DOI: 10.1016/j.vacuum.2024.113634

Flexible electronics are expected to play a vital role in wearable systems and multifunctional smart electronic devices owing to their capacity to conform to various shapes. The amorphous AlInN film was synthesized on a Polyethylene terephthalate (PET) substrate via radio-frequency (RF) magnetron sputtering to fabricate a flexible AlInN ultraviolet (UV) photodetector. The device demonstrates a sensitivity of 1708, a detectivity (D*) of 3.11 × 107 Jones and satisfactory photoresponse under 365 nm UV excitation. In particular, we carried out the flexibility experiments for device and analysis its photoresponse characteristics. After more than 100 times bending at about 90° angle, the photocurrent of the device remains at 97 % of its original value. These findings demonstrate the potential of AlInN films in the UV flexible photodetection and display an effective fabrication strategy for UV flexible photodetectors. •Amorphous AlInN film was synthesized on PET substrate via RF magnetron sputtering to create a flexible UV photodetector.•The device retains 97% of its original photocurrent value after over 100 bends at a 90° angle.•The device shows good photoresponse at 5V with an on-off ratio of 18.1, sensitivity of 1708, and R of 4.25×10⁻⁵ A/W.