Local probing of the nanoscale hydration landscape of kaolinite basal facets in the presence of ions

• Published in: Materials today physics Vol. 46; p. 101504
• Main Authors: Cafolla, Clodomiro, Bui, Tai, Bao Le, Tran Thi, Zen, Andrea, Tay, Weparn J., Striolo, Alberto, Michaelides, Angelos, Greenwell, Hugh Christopher, Voïtchovsky, Kislon
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2024
• ISSN: 2542-5293; 2542-5293
• DOI: 10.1016/j.mtphys.2024.101504

The interface between aqueous solutions and the facets of kaolinite plays an important role in a wide range of technological applications including tribology, paper production, oil recovery, waste water treatment and medical devices. This is made possible by kaolinite's layered structure, with its two basal surfaces -aluminol and siloxane-exhibiting different properties and reactivity. Using a combination of high-resolution atomic force microscopy (AFM) and atomistic molecular dynamics (MD) simulations, we probe in situ the hydration structure over both facets, in water and in the presence of added NaCl. The AFM images reflect the facets' first hydration layer, as confirmed from simulations. Complementary AFM spectroscopy measurements show an excellent agreement between the conservative component and MD's water density profiles, with discrete hydration layers on both facets and little sensitivity to added ions. The dissipative component of the measured tip-sample interactions is more sensitive to the presence of ions, with MD suggesting a link with the local water dynamics and transient instabilities between stable hydration layers. These effects are facet-dependant and more pronounced on the aluminol facet where the first water layer is better defined. Increasing the salt concentration allows hydrated ions to form more stable layers, with hints of organised ionic domains. The results provide unique insights into both the equilibrium molecular structure and dynamics of the kaolinite facets, potentially informing applications involving interfacial processes. [Display omitted]