Luminescence of oxygen vacancies in hafnium oxide, characteristics of emission bands and use for diagnostics of technological processes

• Published in: Optical materials Vol. 154; p. 115693
• Main Authors: Bulyarskiy, Sergey V., Litvinova, Kristina I., Rudakov, Grigory A., Dudin, Alexander A., Gusarov, Georgy G., Edelbekova, Polina A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2024
• Subjects: Defects; Electron-phonon interaction; Hafnium oxide; Luminescence; Oxygen vacancies; Electron-phonon interaction; Hafnium oxide; Oxygen vacancies; Luminescence; Defects
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2024.115693

Oxygen vacancies play an important role in the formation of the electrical and optical properties of hafnium oxide. Both conductivity and emission bands are determined by this intrinsic defect. The work studies the luminescence of oxygen vacancies. The spectral and temperature dependences of luminescence show the leading role of electron-phonon interaction. The work proposes an algorithm for determining the parameters of this interaction and constructs configuration-coordinate diagrams of emission centers that are associated with different charge states of oxygen vacancies in hafnium oxide. •Hafnium oxide luminescence spectra of 1–3 eV range are analyzed.•The bands are caused by transitions between the oxygen vacancy electronic states.•The shape of the emission bands is due to the electron-phonon interaction.•The vacancy content changes under technological operations, bands intensity as well.•So photoluminescence spectra are a useful tool for technological processes control.