Laser processed semiconductors for integrated photonic devices -INVITED

We report results of laser processing of amorphous silicon and silicon-germanium semiconductor materials for the production of integrated photonic platforms. As the materials are deposited and processed at low temperatures, they are flexible, low cost, and suitable for multi-layer integration with o...

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Bibliographic Details
Published inEPJ Web of Conferences Vol. 238; p. 1001
Main Authors Peacock, Anna C., MacFarquhar, Stuart J., Franz, Yohann, Runge, Antoine F. J., Mailis, Sakellaris, Oo, Swe Z., Mittal, Vinita, Chong, Harold M. H., Aktas, Ozan
Format Journal Article Conference Proceeding
LanguageEnglish
Published Les Ulis EDP Sciences 2020
Subjects
Amorphous materials
Amorphous silicon
Crystallization
Germanium
Laser processing
Low temperature
Multilayers
Optoelectronics
Photonic crystals
Semiconductor materials
Silicon
Silicon base alloys
Waveguides
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Summary:We report results of laser processing of amorphous silicon and silicon-germanium semiconductor materials for the production of integrated photonic platforms. As the materials are deposited and processed at low temperatures, they are flexible, low cost, and suitable for multi-layer integration with other photonic or electronic layers. We demonstrate the formation of waveguides via crystallization of pre-patterned silicon components and functional microstructures through crystallization and compositional tuning of silicon-germanium alloy films. These results open a route for the fabrication of high density, multi-functional integrated optoelectronic chips.
ISSN:2100-014X
2101-6275
2100-014X
DOI:10.1051/epjconf/202023801001