Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching

Saved in:
Bibliographic Details
Published inOptics express Vol. 22; no. 3; p. 3585
Main Authors Son, Ji-Su, Honda, Yoshio, Amano, Hiroshi
Format Journal Article
LanguageEnglish
Published 10.02.2014
Online AccessGet full text

Cover

More Information
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.22.003585