Extreme scaling with ultra-thin Si channel MOSFETs

We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate le...

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Bibliographic Details
Published inDigest. International Electron Devices Meeting pp. 267 - 270
Main Authors Doris, B., Meikei Ieong, Kanarsky, T., Ying Zhang, Roy, R.A., Dokumaci, O., Zhibin Ren, Fen-Fen Jamin, Leathen Shi, Natzle, W., Hsiang-Jen Huang, Mezzapelle, J., Mocuta, A., Womack, S., Gribelyuk, M., Jones, E.C., Miller, R.J., Wong, H.-S.P., Haensch, W.
Format Conference Proceeding
LanguageEnglish
Published Piscataway NJ IEEE 2002
Subjects
Applied sciences
Circuit properties
Dielectrics
Doping
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Fabrication
Implants
Microelectronics
MOSFETs
Oscillators, resonators, synthetizers
Oxidation
Research and development
Ring oscillators
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
Ultrathin films
Ring oscillator
Silicon on insulator technology
MOSFET
Miniaturization
Planar technology
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Summary:We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thin Si channels.
ISBN:9780780374621
0780374622
DOI:10.1109/IEDM.2002.1175829