Radiation Hardened ReRAM Devices for Flexible Electronics

• Published in: IEEE journal on flexible electronics Vol. 2; no. 5; p. 1
• Main Authors: Lodhi, Anil, Dwivedi, Anurag, Saini, Shalu, Jingar, Naresh, Khandelwal, Arpit, Tiwari, Shree Prakash
• Format: Journal Article
• Language: English
• Published: IEEE 01.09.2023
• Subjects: Behavioral sciences; Electrodes; Flexible electronics; gamma radiation; Hafnium oxide; HfO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">x; Nonvolatile memory; Performance evaluation; resistive random access memory (ReRAM); Resistive switching; Switches

Radiation hard flexible resistive random access memory (ReRAM) devices with the ultrathin HfO x active layer deposited by atomic layer deposition (ALD) are demonstrated. Effect of gamma radiation is investigated on switching characteristics to observe the radiation hardness. Fabricated ReRAM devices...