Radiation Hardened ReRAM Devices for Flexible Electronics

• Published in: IEEE journal on flexible electronics Vol. 2; no. 5; p. 1
• Main Authors: Lodhi, Anil, Dwivedi, Anurag, Saini, Shalu, Jingar, Naresh, Khandelwal, Arpit, Tiwari, Shree Prakash
• Format: Journal Article
• Language: English
• Published: IEEE 01.09.2023
• Subjects: Behavioral sciences; Electrodes; Flexible electronics; gamma radiation; Hafnium oxide; HfO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">x; Nonvolatile memory; Performance evaluation; resistive random access memory (ReRAM); Resistive switching; Switches
• ISSN: 2768-167X; 2768-167X
• DOI: 10.1109/JFLEX.2023.3289481

Radiation hard flexible resistive random access memory (ReRAM) devices with the ultrathin HfO x active layer deposited by atomic layer deposition (ALD) are demonstrated. Effect of gamma radiation is investigated on switching characteristics to observe the radiation hardness. Fabricated ReRAM devices show excellent switching characteristics with good data retention and multiple cycle operation, which is retained even after the 60 Co gamma radiation with a dose of 1 kGy. Effect of extreme gamma radiation of 5 kGy on device behavior was also examined, however, a degradation in performance was observed at these high doses. For dose of 1 kGy, the SET voltage slightly changed from 1.0 V to 1.1 V after irradiation, whereas the RESET changed slightly from -1.48 V to -1.5 V for the first cycle. These values were also compared for mean and median of 125 cycles of resistive switching. With repeatability of more than 125 cycles, excellent retention time of 5000 s was observed. Additionally, by bending the irradiated devices at 12.5 mm radius and then at 7 mm radius, the electro-mechanical stability was examined. Our results show these flexible ReRAM devices can be utilized in gamma radiation environments.