Simulation and deposition of Tungsten oxide (WO3) films using DC sputtering towards UV photodetector for high responsivity

• Published in: Physica. B, Condensed matter Vol. 695; p. 416555
• Main Authors: G, Nithya, Naveen Kumar, Kilari, Shaik, Habibuddin, Reddy, Sudheer, Sen, Prosenjit, Guru Prakash, Nunna, Ansari, Mushtaq Ahmad
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.12.2024
• Subjects: And partial pressure of oxygen; Annealing temperatures; DC magnetron sputtering; Responsitivity; Tungsten trioxide; UV photodetector; Annealing temperatures; UV photodetector; DC magnetron sputtering; Tungsten trioxide; And partial pressure of oxygen; Responsitivity
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2024.416555

Tungsten trioxide (WO3) detects UV radiation with great sensitivity while disregarding visible light, and it also has excellent electron mobility, allowing for efficient charge transport and fast response times. This work aims to develop a highly sensitive UV photodetector using WO3 material by optimizing the deposition parameter partial oxygen pressure (PaO2) and annealing the samples at various temperatures to determine the best PaO2 and annealing temperature that results in an improvement in the UV photodetector's sensitivity. The material WO3 was coated on glass substrates using DC magnetron sputtering while altering the PaO2 as 6 × 10−2 Pa, 4 × 10−2 -2 Pa, and 2 × 10−2 Pa, and then each as-deposited sample from varied PaO2 was annealed at temperatures ranging from 100°C to 400°C. When the sample's responses were compared, it was observed that the sample deposited at PaO2 2 × 10−2 Pa and annealed at 400 °C exhibited good photodetection capabilities, as evidenced by several characterization techniques such as SEM, XRD, and IV characterization. The work was subsequently carried out by evaluating the sample deposited at PaO2 2 × 10−2 Pa and annealed at 700 °C, which produced a good result for UV photodetection with the device's responsivity of 1e+4 A/W.