Carbon nanotubes for interconnect applications

We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as fu...

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Bibliographic Details
Published inIEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 pp. 683 - 686
Main Authors Kreup, F., Graham, A.P., Liebau, M., Duesberg, G.S., Seidel, R., Unger, E.
Format Conference Proceeding
LanguageEnglish
Published Piscataway NJ IEEE 2004
Subjects
Applied sciences
Atomic layer deposition
Carbon nanotubes
Conductivity
Contact resistance
Copper
Current density
Design. Technologies. Operation analysis. Testing
Electron tubes
Electronics
Exact sciences and technology
Filling
Integrated circuits
Semiconductivity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Wave functions
Carbon nanotubes
Interconnection
Current density
Integrated circuit
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Summary:We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5/spl middot/10/sup 8/ A/cm/sup 2/ and a resistance of 7.8 k/spl Omega/ could be achieved for a single multi-walled CNT vertical interconnect.
ISBN:0780386841
9780780386846
DOI:10.1109/IEDM.2004.1419261