Synthesizing New AM4X8 Memristive Materials for Electronic Applications

A study is performed of different conditions of the synthesis and growth of perfect crystals of the family of Mott insulators for creating memristors (new-generation memory elements). The ceramic synthesis of GaNb 4 Se 8 compound is used in combination with the thermolysis of niobium selenides under...

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Published inBulletin of the Russian Academy of Sciences. Physics Vol. 85; no. 9; pp. 959 - 961
Main Authors Borisenko, D. N., Kolesnikov, N. N., Shmytko, I. M., Tulina, N. A., Zotov, A. V., Borisenko, I. Yu, Tulin, V. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.09.2021
Springer Nature B.V
Subjects
Crystal growth
Hadrons
Heavy Ions
Insulators
Memristors
Niobium
Nonequilibrium conditions
Nuclear Physics
Physics
Physics and Astronomy
Selenides
Synthesis
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Summary:A study is performed of different conditions of the synthesis and growth of perfect crystals of the family of Mott insulators for creating memristors (new-generation memory elements). The ceramic synthesis of GaNb 4 Se 8 compound is used in combination with the thermolysis of niobium selenides under nonequilibrium conditions, allowing a material with a high level of chemical uniformity to be created.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873821090057