On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture
The influence of the initial composition of a CF 4 + CHF 3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied...
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| Published in | Russian microelectronics Vol. 51; no. 5; pp. 302 - 310 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Moscow
Pleiades Publishing
01.10.2022
Springer Nature B.V |
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| Abstract | The influence of the initial composition of a CF
4
+ CHF
3
+ Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied. It is found that the variation of the CF
4
/CHF
3
ratio does not lead to significant perturbations of the parameters of the electronic and ionic components of the plasma, but significantly changes the concentrations of fluorine atoms and polymer-forming radicals. In contrast, an increase in the bias power at a fixed initial composition of the mixture has practically no effect on the concentrations of active particles, but is characterized by a proportional change in the energy of the bombarding ions. The model analysis of the kinetics of heterogeneous processes shows that the CF
4
/CHF
3
ratio provides wider ranges of regulation of the etching rate of the base material, as well as the deposition rate of the fluorocarbon polymer film and its thickness. |
|---|---|
| AbstractList | The influence of the initial composition of a CF
4
+ CHF
3
+ Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied. It is found that the variation of the CF
4
/CHF
3
ratio does not lead to significant perturbations of the parameters of the electronic and ionic components of the plasma, but significantly changes the concentrations of fluorine atoms and polymer-forming radicals. In contrast, an increase in the bias power at a fixed initial composition of the mixture has practically no effect on the concentrations of active particles, but is characterized by a proportional change in the energy of the bombarding ions. The model analysis of the kinetics of heterogeneous processes shows that the CF
4
/CHF
3
ratio provides wider ranges of regulation of the etching rate of the base material, as well as the deposition rate of the fluorocarbon polymer film and its thickness. The influence of the initial composition of a CF4 + CHF3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied. It is found that the variation of the CF4/CHF3 ratio does not lead to significant perturbations of the parameters of the electronic and ionic components of the plasma, but significantly changes the concentrations of fluorine atoms and polymer-forming radicals. In contrast, an increase in the bias power at a fixed initial composition of the mixture has practically no effect on the concentrations of active particles, but is characterized by a proportional change in the energy of the bombarding ions. The model analysis of the kinetics of heterogeneous processes shows that the CF4/CHF3 ratio provides wider ranges of regulation of the etching rate of the base material, as well as the deposition rate of the fluorocarbon polymer film and its thickness. |
| Author | Efremov, A. M. Kwon, K.-H. Betelin, V. B. |
| Author_xml | – sequence: 1 givenname: A. M. surname: Efremov fullname: Efremov, A. M. email: amefremov@mail.ru organization: Ivanovo State University of Chemistry and Technology – sequence: 2 givenname: V. B. surname: Betelin fullname: Betelin, V. B. organization: Scientific Research Institute for System Analysis, Russian Academy of Sciences – sequence: 3 givenname: K.-H. surname: Kwon fullname: Kwon, K.-H. organization: Korea University |
| BookMark | eNp1kF9LwzAUxYNM0KkfwLeAj1K9N2nT9nEU58QNh3-eS5fdzMiWzKSF-e2tTvBBfDoXzu-cC2fIBs47Yuwc4QpRptdPCErmssyFgAwgyw7YMSooEpliNujv3k6-_CM2jPENAAGUOma7B8fbV-Iz0q-Ns3ET-SOtunXTWrf6dubrJm4aXvnN1kfbWu9445b83jpqrY7cGz6hloJfkSPfRT4PXlOMFLntUV6NU37Jq8lY9jIKfGZ3bRfolB2aZh3p7EdP2Mv45rmaJNOH27tqNE00FjJLSiNR5KlQhjCXAFBorWWJqdLLhRGmBKFkKRBBF_nCNCiWZQH5cqEoQ5UaecIu9r3b4N87im395rvg-pe1yBGLEopc9hTuKR18jIFMvQ1204SPGqH-Grj-M3CfEftM7Fm3ovDb_H_oEwGve9w |
| Cites_doi | 10.1116/1.1387048 10.1116/1.586925 10.1007/978-1-4899-2566-4 10.1116/1.1626642 10.1007/s11090-017-9820-z 10.1116/1.1417538 10.1134/S1063739719060040 10.1134/S1063739720020031 10.1088/0963-0252/8/4/305 10.1116/1.581016 10.1063/1.2345461 10.3390/ma14061432 10.1116/1.1531140 10.1007/BF01465219 10.1007/978-3-319-10295-5 10.1016/j.tsf.2017.03.035 10.1515/9783112539545-001 10.1116/1.1376709 10.1016/j.tsf.2015.02.060 |
| ContentType | Journal Article |
| Copyright | Pleiades Publishing, Ltd. 2022. ISSN 1063-7397, Russian Microelectronics, 2022, Vol. 51, No. 5, pp. 302–310. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Mikroelektronika, 2022, Vol. 51, No. 5, pp. 353–361. |
| Copyright_xml | – notice: Pleiades Publishing, Ltd. 2022. ISSN 1063-7397, Russian Microelectronics, 2022, Vol. 51, No. 5, pp. 302–310. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Mikroelektronika, 2022, Vol. 51, No. 5, pp. 353–361. |
| DBID | AAYXX CITATION |
| DOI | 10.1134/S1063739722050055 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1608-3415 |
| EndPage | 310 |
| ExternalDocumentID | 10_1134_S1063739722050055 |
| GroupedDBID | -5B -5G -BR -EM -Y2 -~C .86 .DC .VR 06D 0R~ 0VY 123 1N0 29P 29~ 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 4.4 408 409 40D 40E 5VS 67Z 6NX 8TC 95- 95. 95~ 96X AAAVM AABHQ AAFGU AAHNG AAIAL AAJKR AANZL AAPBV AARHV AARTL AATNV AATVU AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABBBX ABBXA ABDZT ABECU ABFGW ABFTV ABHQN ABJNI ABJOX ABKAS ABKCH ABKTR ABMNI ABMQK ABNWP ABPTK ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACSNA ACTTH ACVWB ACWMK ADHHG ADHIR ADINQ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEFTE AEGAL AEGNC AEJHL AEJRE AEOHA AEPYU AESTI AETLH AEVLU AEVTX AEXYK AFGCZ AFLOW AFNRJ AFQWF AFWTZ AFZKB AGAYW AGDGC AGGBP AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJRNO AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARMRJ ASPBG AVWKF AXYYD AZFZN B-. BA0 BDATZ BGNMA CAG COF CS3 CSCUP DDRTE DL5 DNIVK DPUIP DU5 EBLON EBS EIOEI EJD ESBYG FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 GQ8 GXS HF~ HG6 HMJXF HQYDN HRMNR HVGLF HZ~ IHE IJ- IKXTQ IWAJR IXC IXD IXE IZIGR IZQ I~X I~Z J-C JBSCW JCJTX JZLTJ KDC KOV LAK LLZTM M4Y MA- N2Q NB0 NPVJJ NQJWS NU0 O9- O93 O9J OAM OVD P9P PF0 PT4 QOS R89 R9I RIG RNI RNS ROL RPX RSV RZC RZE S16 S1Z S27 S3B SAP SDH SEG SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPISZ SRMVM SSLCW STPWE SZN T13 TEORI TSG TSK TSV TUC U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W23 W48 WK8 XU3 YLTOR Z7R Z7X Z7Z Z83 Z88 ZMTXR ~A9 AACDK AAJBT AASML AAYXX ABAKF ACAOD ACDTI ACZOJ AEFQL AEMSY AFBBN AGRTI AIGIU CITATION H13 |
| ID | FETCH-LOGICAL-c1835-9f3127426fe1730008ccc39146cdbf2f9026392110c87bfa12d9807db6e5164f3 |
| IEDL.DBID | AGYKE |
| ISSN | 1063-7397 |
| IngestDate | Fri Sep 13 01:36:48 EDT 2024 Thu Sep 12 16:49:48 EDT 2024 Sat Dec 16 12:07:05 EST 2023 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 5 |
| Keywords | polymerization etching dissociation tetrafluoromethane concentration plasma kinetics mechanism trifluoromethane |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c1835-9f3127426fe1730008ccc39146cdbf2f9026392110c87bfa12d9807db6e5164f3 |
| PQID | 2711890873 |
| PQPubID | 2043758 |
| PageCount | 9 |
| ParticipantIDs | proquest_journals_2711890873 crossref_primary_10_1134_S1063739722050055 springer_journals_10_1134_S1063739722050055 |
| PublicationCentury | 2000 |
| PublicationDate | 2022-10-01 |
| PublicationDateYYYYMMDD | 2022-10-01 |
| PublicationDate_xml | – month: 10 year: 2022 text: 2022-10-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationPlace | Moscow |
| PublicationPlace_xml | – name: Moscow – name: New York |
| PublicationTitle | Russian microelectronics |
| PublicationTitleAbbrev | Russ Microelectron |
| PublicationYear | 2022 |
| Publisher | Pleiades Publishing Springer Nature B.V |
| Publisher_xml | – name: Pleiades Publishing – name: Springer Nature B.V |
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| References_xml | – volume: 19 start-page: 2344 year: 2001 ident: 7309_CR22 publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.1387048 contributor: fullname: P. Ho – volume: 11 start-page: 1243 year: 1993 ident: 7309_CR23 publication-title: J. Vac. Sci. Technol. B doi: 10.1116/1.586925 contributor: fullname: D.C. Gray – volume-title: Dry Etching for VLSI year: 1991 ident: 7309_CR2 doi: 10.1007/978-1-4899-2566-4 contributor: fullname: J. Roosmalen – volume-title: Applications to Nonthermal Plasma Processing year: 2001 ident: 7309_CR1 contributor: fullname: J.R. Rooth – volume: 22 start-page: 53 year: 2004 ident: 7309_CR7 publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.1626642 contributor: fullname: T.E.F.M. Standaert – volume: 37 start-page: 1445 year: 2017 ident: 7309_CR19 publication-title: Plasma Chem. Plasma Process. doi: 10.1007/s11090-017-9820-z contributor: fullname: A. Efremov – volume-title: Plasma Etching and Reactive Ion Etching year: 1982 ident: 7309_CR6 contributor: fullname: J.W. Coburn – volume: 20 start-page: 14 year: 2002 ident: 7309_CR11 publication-title: J. Vac. Sci. Technol., A doi: 10.1116/1.1417538 contributor: fullname: S. Rauf – volume: 48 start-page: 119 year: 2019 ident: 7309_CR12 publication-title: Russ. Microelectron. doi: 10.1134/S1063739719060040 contributor: fullname: A.M. Efremov – volume: 49 start-page: 157 year: 2020 ident: 7309_CR10 publication-title: Russ. Microelectron. doi: 10.1134/S1063739720020031 contributor: fullname: A.M. Efremov – volume: 8 start-page: 553 year: 1999 ident: 7309_CR14 publication-title: Plasma Sources Sci. Technol. doi: 10.1088/0963-0252/8/4/305 contributor: fullname: T. Kimura – volume: 16 start-page: 87 year: 1998 ident: 7309_CR8 publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.581016 contributor: fullname: W.W. Stoffels – volume: 100 start-page: 063303-1 year: 2006 ident: 7309_CR13 publication-title: J. Appl. Phys. doi: 10.1063/1.2345461 contributor: fullname: T. Kimura – volume: 47 start-page: 414 year: 2018 ident: 7309_CR21 publication-title: Russ. Microelectron. contributor: fullname: A.M. Efremov – ident: 7309_CR15 doi: 10.3390/ma14061432 – volume: 21 start-page: 284 year: 2003 ident: 7309_CR17 publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.1531140 contributor: fullname: X. Li – volume: 16 start-page: 99 year: 1996 ident: 7309_CR24 publication-title: Plasma Chem. Plasma Process doi: 10.1007/BF01465219 contributor: fullname: C. Lee – ident: 7309_CR25 – volume-title: Dry Etching Technology for Semiconductors year: 2015 ident: 7309_CR3 doi: 10.1007/978-3-319-10295-5 contributor: fullname: K. Nojiri – volume-title: Principles of Plasma Discharges and Materials Processing year: 1994 ident: 7309_CR4 contributor: fullname: M.A. Lieberman – volume: 629 start-page: 39 year: 2017 ident: 7309_CR16 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2017.03.035 contributor: fullname: A. Efremov – ident: 7309_CR5 doi: 10.1515/9783112539545-001 – volume: 19 start-page: 2089 year: 2001 ident: 7309_CR9 publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.1376709 contributor: fullname: M. Matsui – volume: 579 start-page: 136 year: 2015 ident: 7309_CR18 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2015.02.060 contributor: fullname: I. Chun – volume-title: Langmuir Probe in Theory and Practice year: 2008 ident: 7309_CR20 contributor: fullname: E.V. Shun’ko |
| SSID | ssj0010066 |
| Score | 2.2708583 |
| Snippet | The influence of the initial composition of a CF
4
+ CHF
3
+ Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas... The influence of the initial composition of a CF4 + CHF3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas... |
| SourceID | proquest crossref springer |
| SourceType | Aggregation Database Publisher |
| StartPage | 302 |
| SubjectTerms | Bias Electrical Engineering Engineering Fluorine Kinetics Mixtures Parameters Perturbation Plasma composition Polymer films Polymers Thickness Vapor phases |
| Title | On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture |
| URI | https://link.springer.com/article/10.1134/S1063739722050055 https://www.proquest.com/docview/2711890873/abstract/ |
| Volume | 51 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8JAEJ7wuOjBtxFFsgdPkmLp9nkkBCQS1KgkeGrodjchhGIoJMRf70xbQEUPnHrY7SbtTGe-6cx8A3Bj6aEr0A-jBIJAM6m-EVGR0jg6O901LU-61Jzce7Q7ffNhYA1yYKx_XUTj2iojmRjqdOyIefeKsQt30HtSZygxR-WhaNFU6gIUG_fv3dY6d0BeNMlx2lyjG7Jc5p-H_PRGG4j5KyuaOJv2YdoAGCcchVRjMq4t5kFNfG4zOO7wHEdwkGFP1kiV5RhyMjqB_W-MhKewfIoYQkLWk9QRPIonMXtJp9XjcrLyjHB7MmRkR7J6LzaMQtbFM4jxmU0V61CJzRQ1U04XMctaEWTMRriVNdsmq7Jmp83x0pix3mhJSYwz6Ldbb82Olg1n0ARaAUvzFK9TmtdWsk6c97orhOAeCkSEgTKUh8EdYi9EF8J1AjWsG6Hn6k4Y2NLCEE3xcyhE00heAPN0FRiGDIkhyazroecM0UqgcbCVUFZoluB2JST_I-Xg8JPYhZv-1ussQXklRj_7HGPfcDCO8nTX4SWorsSyWf73sMuddl_BnkHNEUmpXxkK89lCXiNkmQeVTEcrkO8bjS-KqN0w |
| link.rule.ids | 315,786,790,27957,27958,41116,41558,42185,42627,52146,52269 |
| linkProvider | Springer Nature |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwELagDMCAeIpCAQ9MVBFp7Dw8VhVRoE1B0ErdosSxpQ5NUVOk_nzu8qA8B6YMtjzYOd_36bv7TMi1baaehDwMJ5AkBsf6RkBF2mCQ7EyP20J52JwcDp1gzB8m9qTq487ravdakixu6vLdEX77AuSFuZA-sTUUraM2yRbaqSPjGlvdD-kAk2ghcTrMwOmVlPnrEl-T0RphfhNFi1zj75O9CiTSbnmqB2RDZYdk95N14BFZPWYUsBsNFbbuTvNZTp_LZ-VhuBh5Alw8iykGfFWYReMspX1YA62Z6VzTAGth5vALKeD_tOoZUDmdwlTa8zlt017gM_h0FzScrlBtOCZj_27UC4zqFQVDQrjahtCsg3qso1UHzelNT0rJBNyQMk20pQWwMABJAAOk5yY67lip8Ew3TRxlA5fS7IQ0snmmTgkVpk4sS6VoZcQ7ZircGMIZotjRUtspb5Kbejuj19IsIypIBuPRj71vkla94VEVN3lkuUB4hOm5rEna9SGsh_9c7Oxfs6_IdjAKB9Hgftg_JzsWdjQU9Xkt0lgu3tQF4Ixlcln8V-_2ycNj |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwELagSAgGxFMUCnhgoopIYuc1VoUoUFoqoFK3KIltqUOTqmml_nzu8qA8B6YMtm6wffm-03cPQq4tXbgJ4DDcQBxrHPMbgRUpjQHY6S63POlicXJ_YAcj_ji2xtWc07zOdq8lybKmAbs0pYvbmVDVDBJ--wqBDHMASrFMFNtIbZItREbM6RqZnQ8ZAQG1kDttpuH2Stb81cRXYFqzzW8CaYE7_j7Zqwgj7ZQ3fEA2ZHpIdj-1ETwiq-eUAo-jfYllvJN8mtOXcsQ8LBcrQ-DI04ii81dJWjRKBe2BDWzTTDNFA8yLyeA5yWyZ06p-QOZ0Altp1-e0TbuBz-DTmdP-ZIXKwzEZ-fdv3UCrJipoCbiupXmKGajN2koa2Khed5MkYR78LRMRK1N5EJEBYQJKkLhOrCLDFJ6rOyK2pQVxlWInpJFmqTwl1NNVbJpSYFsjbujCcyJwbfBoWyXKErxJburjDGdl44ywCDgYD3-cfZO06gMPKx_KQ9OB4MfTXYc1Sbu-hPXyn8bO_rX7imwP7_zw6WHQOyc7JhY3FKl6LdJYzJfyAijHIr4sntU73GjHqA |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=On+the+Mechanisms+Regulating+the+Plasma+Composition+and+Kinetics+of+Heterogeneous+Processes+in+a+CF4+%2B+CHF3+%2B+Ar+Mixture&rft.jtitle=Russian+microelectronics&rft.au=Efremov%2C+A.+M.&rft.au=Betelin%2C+V.+B.&rft.au=Kwon%2C+K.-H.&rft.date=2022-10-01&rft.pub=Pleiades+Publishing&rft.issn=1063-7397&rft.eissn=1608-3415&rft.volume=51&rft.issue=5&rft.spage=302&rft.epage=310&rft_id=info:doi/10.1134%2FS1063739722050055&rft.externalDocID=10_1134_S1063739722050055 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1063-7397&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1063-7397&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1063-7397&client=summon |