On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture

• Published in: Russian microelectronics Vol. 51; no. 5; pp. 302 - 310
• Main Authors: Efremov, A. M., Betelin, V. B., Kwon, K.-H.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.10.2022; Springer Nature B.V
• Subjects: Bias; Electrical Engineering; Engineering; Fluorine; Kinetics; Mixtures; Parameters; Perturbation; Plasma composition; Polymer films; Polymers; Thickness; Vapor phases; polymerization; etching; dissociation; tetrafluoromethane; concentration; plasma; kinetics; mechanism; trifluoromethane
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739722050055

The influence of the initial composition of a CF 4 + CHF 3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied. It is found that the variation of the CF 4 /CHF 3 ratio does not lead to significant perturbations of the parameters of the electronic and ionic components of the plasma, but significantly changes the concentrations of fluorine atoms and polymer-forming radicals. In contrast, an increase in the bias power at a fixed initial composition of the mixture has practically no effect on the concentrations of active particles, but is characterized by a proportional change in the energy of the bombarding ions. The model analysis of the kinetics of heterogeneous processes shows that the CF 4 /CHF 3 ratio provides wider ranges of regulation of the etching rate of the base material, as well as the deposition rate of the fluorocarbon polymer film and its thickness.