Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity regio...

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Bibliographic Details
Published inRussian microelectronics Vol. 53; no. 1; pp. 44 - 50
Main Authors Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.02.2024
Springer Nature B.V
Subjects
Bipolar transistors
Current voltage characteristics
Electrical Engineering
Electron transport
Emitters
Engineering
Semiconductor devices
Superlattices
bipolar transistor
short period superlattice
negative differential conductivity
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Summary:A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739723600334