Narrowband Photoluminescence in MXenes

• Published in: Bulletin of the Russian Academy of Sciences. Physics Vol. 87; no. Suppl 3; pp. S448 - S452
• Main Authors: Syuy, A. V., Novikov, S. M., Tselikov, G. I., Antonycheva, E. A., Efremenko, V. G., Arsenin, A. V., Volkov, V. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.12.2023; Springer Nature B.V
• Subjects: Aluminum; Aluminum oxide; Etching; Hadrons; Heavy Ions; MXenes; Narrowband; Nuclear Physics; Photoluminescence; Physical properties; Physics; Physics and Astronomy; Synthesis; Temperature dependence; Two dimensional materials; photoluminescence; Raman spectroscopy; MXenes; structure; 2D materials
• ISSN: 1062-8738; 1934-9432
• DOI: 10.1134/S1062873823706013

MXenes are a new material in the family of 2D materials and exhibit striking physical properties common to both dielectrics, conductors, and semiconductors. MXenes are the product of the MAX-phase after aluminum etching. Due to different synthesis techniques and a variety of starting precursors in the synthesis of MAX-phases, the properties of MXenes can also be controlled over a wide range. In this work, we have shown that depending on the presence of aluminum oxide with a small amount of chromium, the structure of MXenes exhibits intense narrow-band luminescence with half-width less than 1 nm under excitation at 532 and 633 nm. Moreover, aluminum oxide is formed naturally because of incomplete etching of aluminum from the structure of the MAX phase. The intensity of narrow band photoluminescence is temperature dependent. The work unambiguously identifies MXenes with and without the presence of aluminum oxide. In relatively pure MXenes, narrowband photoluminescence is absent.