Natural Edge Bilayer Graphene Transistor

• Published in: Russian microelectronics Vol. 52; no. Suppl 1; pp. S2 - S5
• Main Authors: Domaratskiy, I. K., Kashchenko, M. A., Semkin, V. A., Mylnikov, D. A., Titova, E. I., Svintsov, D. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.12.2023; Springer Nature B.V
• Subjects: Bilayers; Chemical etching; Cryogenic temperature; Devices: Transistors; Electric fields; Electrical Engineering; Electrical resistivity; Energy gap; Engineering; Field effect transistors; Graphene; Semiconductor devices; 2; field-effect transistors; bilayer graphene; materials
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739723600541

Application of transverse electric field enables band gap opening in bilayer graphene (BLG) up to hundreds of millielectronvolts. The latter fact may potentially resolve the problem of poor ON/OFF current ratio in carbon-based field effect transistors (FETs). Still, the experimentally observed off-state resistivity in BLG typically saturates at tens of kΩ even at cryogenic temperatures. Here, we show that resistance saturation can be attributed to electron conduction along the disordered edge of BLG exposed to chemical etching. To this end, we fabricate and characterize the FET with encapsulated BLG channel not exposed to any kind of etching. The resistivity of such natural edge transistor does not demonstrate any tendency to saturation with increasing the band gap, and reaches tens of MΩ at temperature T ∼ 25 K. Our result point to the importance of preserving the natural edge structure in 2d transistors for achieving of large ON/OFF current ratios.