Calculation of Electrophysical Characteristics of Semiconductor Quantum Wire Device Structures with One-Dimensional Electron Gas

• Published in: Russian microelectronics Vol. 52; no. Suppl 1; pp. S20 - S29
• Main Authors: Pozdnyakov, D. V., Borzdov, A. V., Borzdov, V. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.12.2023; Springer Nature B.V
• Subjects: Aluminum oxide; Approximation; Carrier transport; Collisional broadening; Conduction; Current carriers; Current voltage characteristics; Devices: Transistors; Electrical Engineering; Electron gas; Electrons; Engineering; Group velocity; Inelastic scattering; Monte Carlo simulation; Potential barriers; Quantum wires; Transfer matrices; Transistors; vertical field-effect transistor; electron ballistic transport; semiconductor quantum nanowire
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739723600401

The accounting method for influence of the collisional broadening of electron quantum states in one-dimensional electron gas on the dispersion law and electron scattering rates for elastic and inelastic mechanisms has been developed in the framework of single-particle approximation of electron ensemble description. In contrast to more rigorous methods the proposed approximation allows analytical expressions for all the relations between charge carriers momentum, energy and group velocity, as well as their scattering rates to be obtained. The application of the proposed approximation in Monte Carlo simulation of charge carrier transport and scattering in device structures on the basis of quantum conductors with one-dimensional electron gas enables cardinal reduction of the computational complexity of corresponding simulation of the particle ensemble behavior. The numerical optimization of physico-topological parameters of vertical ballistic field-effect nanotransistor on the basis of cylindrical undoped Al x Ga 1– x As quantum wire standing in Al 2 O 3 matrix surrounded by metallic gate has been realized. Calculation of the current–voltage characteristics of the nanotransistor has been performed in the framework of Landauer-Buttiker formalism based on the transfer matrix approach with account of nonparabolicity of the band structure of simulated conducting semiconductor channel of the transistor. The influence of scattering of electrons by acoustic and polar optical phonons on charge carrier transport outside and above the potential barrier in the transistor channel has been taken into account by means of application of Monte Carlo method.