Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells
The emission spectra of thin nanocrystalline films of Cu(In 1 – x Ga x )(S y Se 1 – y ) 2 (CIGSSe) direct-gap solid solutions in the structure of solar cells, recorded upon continuous-wave laser excitation (~0.5 W/cm 2 ) and nanosecond pulsed laser excitation with a power density in the range of 0.1...
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Published in | Semiconductors (Woodbury, N.Y.) Vol. 54; no. 10; pp. 1247 - 1253 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.10.2020
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | The emission spectra of thin nanocrystalline films of Cu(In
1 –
x
Ga
x
)(S
y
Se
1 –
y
)
2
(CIGSSe) direct-gap solid solutions in the structure of solar cells, recorded upon continuous-wave laser excitation (~0.5 W/cm
2
) and nanosecond pulsed laser excitation with a power density in the range of 0.1–53 kW/cm
2
at temperatures ranging from 10 to 300 K, are analyzed. It is found that stimulated emission (SE) occurs in thin CIGSSe films at temperatures from 10 to 90 K in the spectral range
h
ν = 1.062–1.081 eV, with a minimum threshold-pump level of ~1 kW/cm
2
. It is shown that the spontaneous emission band is blue-shifted with an increase in the excitation intensity. It is also established that, with an increase in temperature, the photoluminescence (PL) band (upon weak excitation) and the stimulated-emission band are blue-shifted, whereas the PL band is red-shifted upon strong excitation. The possible reasons and mechanisms for the influence of temperature and excitation intensity on the spectral positions of the spontaneous and stimulated emission bands for the solid-solution films are discussed. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782620100310 |