Synergistic effects of electrical and optical excitations on TiO2 resistive device
The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state （PRS） are obs...
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| Published in | 中国物理B：英文版 Vol. 26; no. 8; pp. 462 - 467 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2017
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state （PRS） are observed and ascribed to the electron trapping and the oxygen transport processes. For a resistive switching （RS） device, the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device. With the illumination being off, the conductance slowly decays, which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity. The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices. |
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| Bibliography: | Qi Mao1,2, Wei-Jian Lin2, Ke-Jian Zhu1, Yang Meng1,2, and Hong-Wu Zhao1,2（ 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China） resistance switching, photoconductance, relaxation, oxygen vacancy The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state （PRS） are observed and ascribed to the electron trapping and the oxygen transport processes. For a resistive switching （RS） device, the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device. With the illumination being off, the conductance slowly decays, which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity. The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices. 11-5639/O4 |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/26/8/087702 |