Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors

• Published in: 中国物理快报：英文版 no. 5; pp. 108 - 110
• Main Author: 冯锦锋 刘畅 俞文杰 彭颖红
• Format: Journal Article
• Language: English
• Published: 01.05.2016
• Subjects: 场效应晶体管; 堆栈; 栅极; 清除作用; 量子阱; 金属氧化物; 锗/硅; 高流动性

Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting...