Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors

Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting...

Full description

Saved in:
Bibliographic Details
Published in中国物理快报：英文版 no. 5; pp. 108 - 110
Main Author 冯锦锋 刘畅 俞文杰 彭颖红
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
场效应晶体管
堆栈
栅极
清除作用
量子阱
金属氧化物
锗/硅
高流动性
Online AccessGet full text

Cover

More Information
Summary:Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
Bibliography:11-1959/O4
Jin-Feng Feng, Chang Liu, Wen-Jie Yu, Ying-Hong Peng （1. School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240; 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050）
Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/5/057701