Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors

Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting...

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Published in中国物理快报：英文版 no. 5; pp. 108 - 110
Main Author 冯锦锋 刘畅 俞文杰 彭颖红
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
场效应晶体管
堆栈
栅极
清除作用
量子阱
金属氧化物
锗/硅
高流动性
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Abstract Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
AbstractList Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
Author 冯锦锋 刘畅 俞文杰 彭颖红
AuthorAffiliation School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 State Key Laboratory of I~unctional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Author_xml – sequence: 1
  fullname: 冯锦锋 刘畅 俞文杰 彭颖红
BookMark eNo9j11LwzAYRoNMcJv-BCF4X_OmadLcypjboFqkE70baT66aJdqm4n99w4Ur56LczjwzNAkdMEidE3hloKUBFIuEgb5K2GMcAI8z4GeoSnNM5ownsEETf-dCzQbhjcASiWlU9SU32NjA660-rKh8aHBS-esjrhzuFDFsWRk6x_xSkWLq6j0O_YBr32zTx662rc-jrjypPIrS6pyg5-OKsTjIXmxbYu3vQqDH2LXD5fo3Kl2sFd_O0fP98vtYp0U5WqzuCsSTWUak5oCNQJS5oShJufKGqukcmCFYwoyoNxqk9Y6dRkIKRWva8ME046ZE6zZHN38dvW-C83n6c_uo_cH1Y87IWSep5wz9gMbTFqp
ContentType Journal Article
DBID 2RA
92L
CQIGP
~WA
DOI 10.1088/0256-307X/33/5/057701
DatabaseName 维普期刊资源整合服务平台
中文科技期刊数据库-CALIS站点
维普中文期刊数据库
中文科技期刊数据库- 镜像站点
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Physics
DocumentTitleAlternate Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
EISSN 1741-3540
EndPage 110
ExternalDocumentID 668772553
GroupedDBID 02O
042
1JI
1PV
1WK
29B
2RA
4.4
5B3
5GY
5VR
5VS
5ZH
7.M
7.Q
92L
AAGCD
AAJIO
AAJKP
AALHV
AATNI
ABHWH
ABJNI
ABQJV
ACAFW
ACGFS
ACHIP
AEFHF
AENEX
AFUIB
AFYNE
AHSEE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
ASPBG
ATQHT
AVWKF
AZFZN
BBWZM
CEBXE
CJUJL
CQIGP
CRLBU
CS3
EBS
EDWGO
EJD
EMSAF
EPQRW
EQZZN
FEDTE
HAK
HVGLF
IHE
IJHAN
IOP
IZVLO
JCGBZ
KNG
KOT
LAP
M45
N5L
N9A
NS0
NT-
NT.
P2P
PJBAE
Q02
R4D
RIN
RNS
RO9
ROL
RPA
RW3
S3P
SY9
T37
UCJ
W28
XPP
~02
~WA
ID FETCH-LOGICAL-c182t-b101d6023f6d1d75aedea8af0e6f3a04015ecd2bc2f40688a5bbd363cf3d401b3
ISSN 0256-307X
IngestDate Wed Feb 14 10:18:57 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 5
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c182t-b101d6023f6d1d75aedea8af0e6f3a04015ecd2bc2f40688a5bbd363cf3d401b3
Notes 11-1959/O4
Jin-Feng Feng, Chang Liu, Wen-Jie Yu, Ying-Hong Peng （1. School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240; 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050）
Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
PageCount 3
ParticipantIDs chongqing_primary_668772553
PublicationCentury 2000
PublicationDate 2016-05-01
PublicationDateYYYYMMDD 2016-05-01
PublicationDate_xml – month: 05
  year: 2016
  text: 2016-05-01
  day: 01
PublicationDecade 2010
PublicationTitle 中国物理快报：英文版
PublicationTitleAlternate Chinese Physics Letters
PublicationYear 2016
SSID ssj0011811
Score 2.0725067
Snippet Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type...
SourceID chongqing
SourceType Publisher
StartPage 108
SubjectTerms 场效应晶体管
堆栈
栅极
清除作用
量子阱
金属氧化物
锗/硅
高流动性
Title Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
URI http://lib.cqvip.com/qk/84212X/201605/668772553.html
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3db9MwELfKEBIviE8BA-QH7qkKaZrasR-TLWUgWJHWib1N-dwqRAuslYD_j_-L3zlZmgmEAKlKT7naOfV-vTtfz2chnpcmM3aSlR6iaVyAGi8DTrwarqKIVF6oylVbHOqD48nrE3UyGPzoVS1t1vmL4vtv95X8j1ZxD3rlXbL_oNluUtwADf3iCg3j-lc6nn39Bh5-n3wmvDttqG1G7BL_bzYzbpcwXxwOOUfGcWXxgfMbXNvhvV25sliYDhbgaPGy4rfZKy7zhB_66L3nrJ5zZa6TyEU_jKV0QomheJ9SRTahBERExlJsmbAjMppZyZTihFJNJqZYUTqlZI9sTKkhg1EBsyy4UTvcdIW1PBpzxFNKLdkJxbolTDJ0PEPWuGeBVkMn0JRs2psRxD4lI_dxCMjCQsAxszEugUTjfs4j0NsKw9Y0IlDjrNlJ48Ua043YyOMsVg-1qmeag5HpefmgKab9xYHA6LpeG-38oDnjPXUNOFQUtUJc7dCttcEaRanwmrg-BuX2kc7edX9mIYhyBzdeTnq5kcwYv7vnh6Gv_OYR3ObjfLU8-wzc9IKd-W1xq12lyLiB3B0xqJZ3xQ1XLVxc3BNnDfDkFniyAZ5c1bIBng_YSYaddLCTi6W8Ajt5tPAZdD4gJ_uQkz3I3RfH03S-d-C1J3Z4Bdapay-HgS81wsBal0EZqawqq8xk9ajSdZjBXwSqKspxXozrCZ92lKk8L0MdFnVYgpmHD8TOcrWsHgpZF7rOrInwQpBZjWBrwqpCtB5pmwdl-Ujsdl_S6aemM8tpp4nHf-TuiptbVD0RO-svm-opYst1_sxp7idxo1sx
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Oxygen+Scavenging+Effect+of+LaLuO3%2FTiN+Gate+Stack+in+High-Mobility+Si%2FSiGe%2FSOI+Quantum-Well+Transistors&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86%E5%BF%AB%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E5%86%AF%E9%94%A6%E9%94%8B+%E5%88%98%E7%95%85+%E4%BF%9E%E6%96%87%E6%9D%B0+%E5%BD%AD%E9%A2%96%E7%BA%A2&rft.date=2016-05-01&rft.issn=0256-307X&rft.eissn=1741-3540&rft.issue=5&rft.spage=108&rft.epage=110&rft_id=info:doi/10.1088%2F0256-307X%2F33%2F5%2F057701&rft.externalDocID=668772553
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F84212X%2F84212X.jpg