Electric dipole formation at high-k dielectric/SiO2 interface
The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge neutrality level (CNL) of the DCIGS, which...
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Published in | 半导体学报:英文版 no. 3; pp. 150 - 152 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.03.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge neutrality level (CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths ofhigh-k/SiO2 systems based on this model are in good agreement with the experimental data. |
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Bibliography: | The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge neutrality level (CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths ofhigh-k/SiO2 systems based on this model are in good agreement with the experimental data. high-k dielectric; band alignment; interface dipole 11-5781/TN Han Kai,Wang Xiaolei, Yang Hong, Wang Wenwu |
ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/36/3/036004 |