A Five-Watt Ten-Megacycle Transistor

A 5-watt, 10-mc, silicon power transistor has been developed. The device, made by solid-state diffusion, uses the intrinsic-barrier structure. Although primarily designed as a 5-watt, 10-mc oscillator, some laboratory samples have delivered as much as one watt of power when used as oscillators at 10...

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Bibliographic Details
Published inProceedings of the IRE Vol. 46; no. 6; pp. 1209 - 1215
Main Authors Nelson, J. T., Iwersen, J. E., Keywell, F.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1958
Subjects
Capacitance
Frequency
Laboratories
Oscillators
Power transistors
Silicon
Solid state circuits
Temperature
Thermal conductivity
Voltage
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Summary:A 5-watt, 10-mc, silicon power transistor has been developed. The device, made by solid-state diffusion, uses the intrinsic-barrier structure. Although primarily designed as a 5-watt, 10-mc oscillator, some laboratory samples have delivered as much as one watt of power when used as oscillators at 100 mc. As an amplifier at 10 mc, a unilateral gain in excess of 20 db is obtained at the 5-watt output level. The design, static characteristics, characterization in terms of an equivalent circuit, and performance data are given.
ISSN:0096-8390
2162-6634
DOI:10.1109/JRPROC.1958.286905