A Method for Preparation of Ordered Porous Silicon Based on a 2D SiO2 Template

A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer a...

Full description

Saved in:
Bibliographic Details
Published in中国物理快报：英文版 no. 5; pp. 127 - 130
Main Author 吴英 翟晓霞 甄聪棉 刘晓伟 马丽 侯登录
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
二氧化硅层
二维
制备方法
多孔硅
有序
模板
纳米阵列
过氧化氢溶液
Online AccessGet full text

Cover

More Information
Summary:A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
Bibliography:Ying Wu, Xiao-Xia Zhai, Cong-Mian Zhen, Xiao-Wei Liu, Li Ma, Deng-Lu Hou（ 1.Hebei Advanced Thin Films Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang 050024; 2. Shijiazhuang Institute of Technology, Shijiazhuang 050228）
A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
11-1959/O4
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/5/058103