史力斌, 董. (2016). Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance. 中国物理快报：英文版, 1, 92-95. https://doi.org/10.1088/0256-307X/33/1/016101
Chicago Style (17th ed.) Citation史力斌, 董海宽. "Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance." 中国物理快报：英文版 1 (2016): 92-95. https://doi.org/10.1088/0256-307X/33/1/016101.
MLA (9th ed.) Citation史力斌, 董海宽. "Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance." 中国物理快报：英文版, 1, 2016, pp. 92-95, https://doi.org/10.1088/0256-307X/33/1/016101.
Warning: These citations may not always be 100% accurate.