Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance

Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si,...

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Bibliographic Details
Published in中国物理快报：英文版 no. 1; pp. 92 - 95
Main Author 董海宽 史力斌
Format Journal Article
LanguageEnglish
Published 2016
Subjects
MOS
原生缺陷
器件性能
固有缺陷
氧化物
水平检测
第一原理计算
高介电常数
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Summary:Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.
Bibliography:11-1959/O4
Hai-Kuan Dong, Li-Bin Shi（School of Mathematics and Physics, Bohai University, Jinzhou 121013）
Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/1/016101