Giant antisymmetric magnetoresistance arising across optically controlled domain walls in the magnetic Weyl semimetal Co3Sn2S2

• Published in: Communications materials Vol. 5; no. 1; pp. 239 - 6
• Main Authors: Fujiwara, Kohei, Ogawa, Kazuma, Yoshikawa, Naotaka, Kobayashi, Koji, Nomura, Kentaro, Shimano, Ryo, Tsukazaki, Atsushi
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 02.11.2024; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/1005; 639/766/119/2792; 639/766/119/544; 639/766/119/997; Chemistry and Materials Science; Chirality; Domain walls; Electrical conduction; Hall effect; Magnetic domains; Magnetic materials; Magnetoresistance; Magnetoresistivity; Magnets; Materials Science; Metalloids; Transport phenomena
• ISSN: 2662-4443; 2662-4443
• DOI: 10.1038/s43246-024-00688-w

Domain walls (DWs) in magnetic materials host various interesting magneto-transport phenomena. Recent theoretical proposals focusing on DWs of magnetic Weyl semimetals (mWSMs) suggest the emergence of even more exotic transport owing to topologically protected Weyl domains with opposite chirality. However, techniques for controlling and characterizing DWs in mWSMs have not yet matured sufficiently to identify the distinct features of electrical conduction on DWs. Here, by adopting an optical technique to manipulate magnetic domains in mWSM Co 3 Sn 2 S 2 Hall-bar devices, we discover giant antisymmetric magnetoresistance arising across a DW formed by serially connected upward- and downward-magnetized Weyl domains. This phenomenon originates from the large tangent of the Hall angle associated with the intrinsic anomalous Hall effect in the oppositely magnetized Weyl domains. Furthermore, we quantitatively evaluate DW resistance by systematically controlling the number of DWs. These results underscore the promising avenue of Weyl DW engineering for advanced research on topological magnets. Domain walls in magnetic Weyl semimetals are a source of exotic transport owing to topologically protected domains with opposite chirality. Here, utilizing an optical technique to manipulate magnetic domains in Co 3 Sn 2 S 2 Hall-bar devices, the authors discover giant antisymmetric magnetoresistance across a domain wall formed by serially connected upward- and downward-magnetized Weyl domains.