Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate

Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are sy...

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Bibliographic Details
Published in半导体学报：英文版 no. 11; pp. 53 - 56
Main Author 韩锴 马雪丽 项金娟 杨红 王文武
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
HfO2
MOS电容器
TiN
介电层
低温退火
电性能
金属栅
高k电介质
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Summary:Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. Key words： ALD Hf02; TiN; low temperature annealing; hysteresis
Bibliography:11-5781/TN
Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. Key words： ALD Hf02; TiN; low temperature annealing; hysteresis
Han Kai, Ma Xueli, Xiang Jinjuan, Yang Hong, Wang Wenwu（ 1Department of Physics and Electronic Science, Weifang University, Weifang 261061, China 2Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
ISSN:1674-4926
DOI:10.1088/1674-4926/34/11/114007