A passive UHF RFID tag with a dynamic-Vth-cancellation rectifier
This paper presents a passive UHF RFID tag with a dynamicVthcancellation (DVC) rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ONresis...
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Published in | 半导体学报:英文版 no. 9; pp. 117 - 121 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.09.2013
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Subjects | |
Online Access | Get full text |
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Summary: | This paper presents a passive UHF RFID tag with a dynamicVthcancellation (DVC) rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ONresistance and small re verse leakage of the MOSFETs, resulting in high power conversion efficiency (PCE). An areaefficient demodulator with a novel average detector is also designed, which takes advantage of the rectifier's first stage as the envelope detector. The whole tag chip is implemented in a 0.18 μm CMOS process with a die size of 880 x 950μm2. Measurement results show that the rectifier achieves a maximum PCE of 53.7% with 80 kΩ resistor load. |
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Bibliography: | 11-5781/TN UHF RFID tag; rectifier; demodulator; PCE Shen Jinpeng, Wang Bo, Liu Shan, Wang Xin'an, Ruan Zhengkun, and Li ShouchengThe Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, China This paper presents a passive UHF RFID tag with a dynamicVthcancellation (DVC) rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ONresistance and small re verse leakage of the MOSFETs, resulting in high power conversion efficiency (PCE). An areaefficient demodulator with a novel average detector is also designed, which takes advantage of the rectifier's first stage as the envelope detector. The whole tag chip is implemented in a 0.18 μm CMOS process with a die size of 880 x 950μm2. Measurement results show that the rectifier achieves a maximum PCE of 53.7% with 80 kΩ resistor load. |
ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/34/9/095005 |