The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

• Published in: 中国物理快报：英文版 no. 2; pp. 146 - 148
• Main Author: 陆建新 欧欣 蓝学新 曹正义 刘晓杰 卢伟 龚昌杰 徐波 李爱东 夏奕东 殷江 刘治国
• Format: Journal Article
• Language: English
• Published: 01.02.2014
• Subjects: X射线光电子能谱; 俘获; 存储设备; 捕捉能力; 氧化铝; 电荷储存; 磁控溅射技术; 铜复合材料

A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a...