The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a...

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Published in中国物理快报：英文版 no. 2; pp. 146 - 148
Main Author 陆建新 欧欣 蓝学新 曹正义 刘晓杰 卢伟 龚昌杰 徐波 李爱东 夏奕东 殷江 刘治国
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
X射线光电子能谱
俘获
存储设备
捕捉能力
氧化铝
电荷储存
磁控溅射技术
铜复合材料
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Summary:A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.
Bibliography:11-1959/O4
A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.
LU 3ian-Xin, OU Xin, LAN Xue-Xin, CAO Zheng-Yi, LIU Xiao-Jie, LU Wei, GONG Chang-Jie, XU Bo, LI Ai-Dong, XIA Yi-Dong, YIN 3iang, LIU Zhi-Guo（ 1 National Laboratory of Solid State Microstruetures, and Department of Physics, Nanjing University, Nanjing 210093 2National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093）
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/2/028503