The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer
A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a...
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| Published in | 中国物理快报：英文版 no. 2; pp. 146 - 148 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides. |
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| AbstractList | A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides. |
| Author | 陆建新 欧欣 蓝学新 曹正义 刘晓杰 卢伟 龚昌杰 徐波 李爱东 夏奕东 殷江 刘治国 |
| AuthorAffiliation | National Laboratory of Solid State Microstructures, and Department of Physics, Nanjing University, Nanjing 210093 National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 |
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| DocumentTitleAlternate | The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer |
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| Notes | 11-1959/O4 A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides. LU 3ian-Xin, OU Xin, LAN Xue-Xin, CAO Zheng-Yi, LIU Xiao-Jie, LU Wei, GONG Chang-Jie, XU Bo, LI Ai-Dong, XIA Yi-Dong, YIN 3iang, LIU Zhi-Guo（ 1 National Laboratory of Solid State Microstruetures, and Department of Physics, Nanjing University, Nanjing 210093 2National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093） |
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| PublicationTitle | 中国物理快报：英文版 |
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| Snippet | A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r~magnetron sputtering techniques. The memory device including... |
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| SubjectTerms | X射线光电子能谱 俘获 存储设备 捕捉能力 氧化铝 电荷储存 磁控溅射技术 铜复合材料 |
| Title | The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer |
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