刘治国, 陆. 欧. 蓝. 曹. 刘. 卢. 龚. 徐. 李. 夏. 殷. (2014). The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer. 中国物理快报：英文版, 2, 146-148. https://doi.org/10.1088/0256-307X/31/2/028503
Chicago Style (17th ed.) Citation刘治国, 陆建新 欧欣 蓝学新 曹正义 刘晓杰 卢伟 龚昌杰 徐波 李爱东 夏奕东 殷江. "The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer." 中国物理快报：英文版 2 (2014): 146-148. https://doi.org/10.1088/0256-307X/31/2/028503.
MLA (9th ed.) Citation刘治国, 陆建新 欧欣 蓝学新 曹正义 刘晓杰 卢伟 龚昌杰 徐波 李爱东 夏奕东 殷江. "The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer." 中国物理快报：英文版, 2, 2014, pp. 146-148, https://doi.org/10.1088/0256-307X/31/2/028503.