Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO3 thin films

The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance...

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Published in中国物理B：英文版 no. 11; pp. 557 - 561
Main Author 许定林 熊颖 唐明华 曾柏文 肖永光 王子平
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
切换模式
单极
双极
可逆
开关
电铸工艺
电阻
钛酸锶薄膜
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Summary:The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.
Bibliography:unipolar and bipolar resistive switching, La-doped SrTiO3 thin film
The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.
Xu Ding-Lin）, Xiong Ying, Tang Ming-Hua, Zeng Bai-Wen, Xiao Yong-Guang, Wang Zi-Ping（a） Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, China b ） School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/11/117314