A circuit simulator of the SITh

• Published in: IEEE transactions on power electronics Vol. 7; no. 3; pp. 581 - 591
• Main Authors: Fukase, M.-a., Nakamura, T., Nishizawa, J.-i.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.1992; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit simulation; Computational modeling; Doping; Electrical engineering. Electrical power engineering; Equations; Exact sciences and technology; Newton method; Physics computing; Power electronics, power supplies; Semiconductor device modeling; Semiconductor process modeling; Thyristors; Two dimensional displays; Semiconductor device; Crystal orientation; Physical model; Sequential method; Power device; Rectangular shape; Two dimensional analysis; High frequency; Mesh method; Simulator; Electrical characteristic
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/63.145146

A classification of circuit simulators is provided and the techniques used in these simulators to cater to requirements for the static induction thyristor (SITh) are examined. A circuit simulator expressly for the SITh is reported. Circuit equations implicitly containing two-dimensional (2-D) physical device equations are computed by the Newton-Raphson method. The incompletely rectangular mesh structure of M.S. Adler (1978) is modified to conveniently handle current equations at an arbitrary state. Terminal currents are precisely computed by counting displacement currents that have not been simulated but are experimentally known to be important. The model includes the crystal orientation of the wafer. The simulation makes clear how to design gate doping and control the gate during on-states to improve forward voltage drop without violating forward-blocking capability. Simulation of the turn-off state proves the reliability of the circuit simulator physically as well as mathematically.< >