Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film
The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened b...
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Published in | 中国物理B:英文版 no. 10; pp. 52 - 55 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.10.2013
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Subjects | |
Online Access | Get full text |
ISSN | 1674-1056 2058-3834 |
DOI | 10.1088/1674-1056/22/10/106804 |
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Summary: | The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2. |
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Bibliography: | β-FeSi2 nanocrystal, photoluminescence, resonant charge transfer 11-5639/O4 The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2. |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/22/10/106804 |