The effects of radiation damage on power VDMOS devices with composite SiO2-Si3N4 films
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si...
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| Published in | 中国物理B：英文版 no. 3; pp. 393 - 398 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.03.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/22/3/036103 |
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| Abstract | Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films. |
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| AbstractList | Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films. |
| Author | 高博 刘刚 王立新 韩郑生 宋李梅 张彦飞 腾瑞 吴海舟 |
| AuthorAffiliation | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Author_xml | – sequence: 1 fullname: 高博 刘刚 王立新 韩郑生 宋李梅 张彦飞 腾瑞 吴海舟 |
| BookMark | eNo9zN1KwzAYxvEgE9ymlyDEC6jNmzdN00OZOoXpDjp3OmI-usjazKY4vHsLikfPc_DjPyOTLnaOkGtgt8CUykGWIgNWyJzzHHOGEhiekSlnhcpQoZiQ6b-5ILOUPhgbDccp2W72jjrvnRkSjZ722gY9hNhRq1vdODq-Yzy5nm7vX9Y1te4rGJfoKQx7amJ7jCkMjtZhzbM64KugPhzadEnOvT4kd_W3c_L2-LBZPGWr9fJ5cbfKDCgYMiULMGgl4_IdmRamqrgrDOO2BMUrrGAEDoWyVVVKL6Q1RgMgWgTmjcA5ufntmn3sms_QNbtjH1rdf-9EAWoMl_gDst5SYw |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA |
| DOI | 10.1088/1674-1056/22/3/036103 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库- 镜像站点 |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | The effects of radiation damage on power VDMOS devices with composite SiO2-Si3N4 films |
| EISSN | 2058-3834 |
| EndPage | 398 |
| ExternalDocumentID | 45186027 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA |
| ID | FETCH-LOGICAL-c181t-8651c3d6026b30a4c992e5c02d71829391651e348d9976f46dcca1133d310fc43 |
| ISSN | 1674-1056 |
| IngestDate | Wed Feb 14 10:43:24 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 3 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c181t-8651c3d6026b30a4c992e5c02d71829391651e348d9976f46dcca1133d310fc43 |
| Notes | Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films. power VDMOS device,total dose effects,single event effects,composite SiO2-Si3N4 films 11-5639/O4 Gao Bo , Liu Gang , Wang Li-Xin , Zhang Yan-Fei , Teng Rui,Han Zheng-Sheng , Song Li-Mei , Wu Hai-Zhou（ Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China） |
| PageCount | 6 |
| ParticipantIDs | chongqing_primary_45186027 |
| PublicationCentury | 2000 |
| PublicationDate | 2013-03-01 |
| PublicationDateYYYYMMDD | 2013-03-01 |
| PublicationDate_xml | – month: 03 year: 2013 text: 2013-03-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | 中国物理B：英文版 |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2013 |
| SSID | ssj0061023 |
| Score | 1.9567038 |
| Snippet | Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite... |
| SourceID | chongqing |
| SourceType | Publisher |
| StartPage | 393 |
| SubjectTerms | VDMOS器件 二氧化硅 复合 总剂量效应 氮化硅薄膜 辐射功率 辐射损伤 阈值电压漂移 |
| Title | The effects of radiation damage on power VDMOS devices with composite SiO2-Si3N4 films |
| URI | http://lib.cqvip.com/qk/85823A/201303/45186027.html |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELaWIiQuiKegPOQDPq3CJn7E9jHpelWQ2kXatuqtyiZO2UN3S9le-OmcmHGcdCUQAi7RaGx_6818csbWeIaQ97JqtakqkeQVbxNZK5EsG80TqbUWNbCm9njB-eg4PzyVn87V-Wj0Yydq6Xa7_FB__-29kv-xKujArnhL9h8sO4CCAmSwLzzBwvD8axvvBGTcYJ6BYM-musJYHJCusQra-Gx6NF_gBSlcFvpw86sQsOXHi9WcJ4uVOJaYpSlmL4_-KnOSlYYVU-YUsyUrQdDMWFZYFGzKTF4yN2PlAbMFc4YZ6JQxlzObM6NjbzMEzDIHY0tmDQKaKQwaB8n0KtOpYJhDLBCgOwoBsUzHiGBnYQIALJjNwkwkKANU4fruU8QAoeDMqNAGsyzSIExZkYe5AIAbh4mD1gWorFMp_HulRIQS2nToBNOb7Z6UYNWKPlQsLu65lvDZUTH1dtDxVJlE9Aeqq90jgrCgi65-Y_QNRFcx-5fPDizVeALS4-MtG8xrizkxwEPIUnH3tR1iIKXKsP6Xvkfuc61DiMHH-efei8gxpQYeFvSY_e0zYyaDbsL5REy6X8DcIF8268uv4PHseEgnj8mjuLWhRcfTJ2Tk10_JgxBiXH97Rs6ArTSylW5aOrCVdmylIAW20sBWGtlKka10YCu9YysNbH1OTmfu5OAwiVU9khq8yW1icpXVosHSZ0uRVrK2lntVp7wBNwmcT9ivqMwLaRoLrnIr8wYWmSwTooGdSFtL8YLsrTdr_5JQaTymb5RaSS956423OjVeq6ZSNmubV2R_eCcX1132lov-ve__qfE1eQgMisGEb8je9ubWvwXvc7t8F8z0E-nJWt4 |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+effects+of+radiation+damage+on+power+VDMOS+devices+with+composite+SiO2-Si3N4+films&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E9%AB%98%E5%8D%9A+%E5%88%98%E5%88%9A+%E7%8E%8B%E7%AB%8B%E6%96%B0+%E9%9F%A9%E9%83%91%E7%94%9F+%E5%AE%8B%E6%9D%8E%E6%A2%85+%E5%BC%A0%E5%BD%A6%E9%A3%9E+%E8%85%BE%E7%91%9E+%E5%90%B4%E6%B5%B7%E8%88%9F&rft.date=2013-03-01&rft.issn=1674-1056&rft.eissn=2058-3834&rft.issue=3&rft.spage=393&rft.epage=398&rft_id=info:doi/10.1088%2F1674-1056%2F22%2F3%2F036103&rft.externalDocID=45186027 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |