The effects of radiation damage on power VDMOS devices with composite SiO2-Si3N4 films

• Published in: 中国物理B：英文版 no. 3; pp. 393 - 398
• Main Author: 高博 刘刚 王立新 韩郑生 宋李梅 张彦飞 腾瑞 吴海舟
• Format: Journal Article
• Language: English
• Published: 01.03.2013
• Subjects: VDMOS器件; 二氧化硅; 复合; 总剂量效应; 氮化硅薄膜; 辐射功率; 辐射损伤; 阈值电压漂移
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/22/3/036103

Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.