Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1...

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Published in中国物理B：英文版 no. 7; pp. 459 - 462
Main Author 王建霞 杨少延 王俊 刘贵鹏 李志伟 李辉杰 金东东 刘祥林 朱勤生 王占国
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
AlGaN
二维电子气
子带能量
电子迁移率
界面
粗糙散射
表面粗糙度
量子阱
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Summary:The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
Bibliography:Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng,Wang Zhan-Guo Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
AlGaN/GaN quantum wells;surface roughness scattering;polarization fields;mobility
11-5639/O4
The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/7/077305