Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

We report on the Au-assisted vapour-liquid-solid （VLS） growth of GaAs/InxGal xAs/GaAs （0.2 ≤ x ≤1） axial double-heterostructure nanowires on GaAs （ 111 ） B substrates via the metal-organic chemical vapor deposition （MOCVD） technique. The influence of the indium （In） content in an Au particle on the...

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Published in中国物理B：英文版 no. 6; pp. 459 - 464
Main Author 吕晓龙 张霞 刘小龙 颜鑫 崔建功 李军帅 黄永清 任晓敏
Format Journal Article
LanguageEnglish
Published 01.06.2013
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Summary:We report on the Au-assisted vapour-liquid-solid （VLS） growth of GaAs/InxGal xAs/GaAs （0.2 ≤ x ≤1） axial double-heterostructure nanowires on GaAs （ 111 ） B substrates via the metal-organic chemical vapor deposition （MOCVD） technique. The influence of the indium （In） content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGal xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.
Bibliography:nanostructures, nanowire heterostructures, metal-organic chemical vapor deposition
11-5639/O4
We report on the Au-assisted vapour-liquid-solid （VLS） growth of GaAs/InxGal xAs/GaAs （0.2 ≤ x ≤1） axial double-heterostructure nanowires on GaAs （ 111 ） B substrates via the metal-organic chemical vapor deposition （MOCVD） technique. The influence of the indium （In） content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGal xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/6/066101