170-GHz transceiver with on-chip antennas in SiGe technology

A single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165-GHz oscillator and static frequency divider is reported in a SiGe HBT process with f T /f MAX of 270 GHz/340 GHz. This marks the highest frequency transceiver in silicon and the highest level of functional...

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Bibliographic Details
Published in2008 IEEE Radio Frequency Integrated Circuits Symposium pp. 637 - 640
Main Authors Laskin, E., Tang, K.W., Yau, K.H.K., Chevalier, P., Chantre, A., Sautreuil, B., Voinigescu, S.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
amplifiers
Antenna measurements
Dipole antennas
Frequency conversion
frequency divider
Gain measurement
Germanium silicon alloys
integrated antenna
mm-wave transceivers
Oscillators
Power measurement
Receiving antennas
SiGe HBT technology
Silicon germanium
Transceivers
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Summary:A single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165-GHz oscillator and static frequency divider is reported in a SiGe HBT process with f T /f MAX of 270 GHz/340 GHz. This marks the highest frequency transceiver in silicon and the highest level of functional integration above 100 GHz in any semiconductor technology. The downconversion gain peaks at -5 dB and the transmit power is -5 dBm when measured at the transceiver pads. Both degrade by approximately 25 dB when measured above the antennas of the transceiver with on-die antennas. The experimental performance of dipole (with and without floating metal strips) and patch antennas is also investigated. The measured 15-dB gain of a standalone amplifier is centered at 170 GHz and remains higher than 10 dB from 160 GHz to 180 GHz while the saturated output power is 0 dBm at 165 GHz.
ISBN:9781424418084
1424418089
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2008.4561518