Properties of Li doped diamond films, obtained by transmutation of 10B into 7Li

• Published in: Diamond and related materials Vol. 5; no. 6; pp. 761 - 765
• Main Authors: Popovici, G., Melnikov, A.A., Varichenko, V.S., Khasawinah, S., Sung, T., Prelas, M.A., Denisenko, A.B., Penina, N.M., Martinovich, V.A., Drozdova, E.N., Zaitsev, A.M., Fahrner, W.R., Farmer, J.W., White, H., Chamberlain, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.1996; Elsevier
• Subjects: Cathodoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Diamond film; Electrical conductance; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Neutron irradiation; Neutron radiation effects; Other inorganic semiconductors; Physical radiation effects, radiation damage; Physics; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Neutron irradiation; Electrical conductance; Diamond film; Cathodoluminescence; Temperature dependence; Raman spectra; Annealing; Synthetic mineral; Physical radiation effects; Diamonds; Doped materials; Experimental study; Characterization; Thin films; Nonmetals; Transmutation; Neutron beams; Boron additions; Crystal recovery; Electric conductivity
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/0925-9635(95)00399-1

10B doped diamond films grown by hot filament chemical vapor deposition were neutron irradiated for 4 weeks. The as-irradiated, and annealed samples, along with unirradiated samples, were analyzed using Raman, cathodoluminescence, and electrical conductivity measurements. The feasibility of the restoration of the quality of the irradiated films upon annealing was shown. The cathodoluminescence and electrical resistivity measurements showed that donor centers are formed during annealing in the irradiated samples. These donor levels may be Li atoms that move into interstitial sites of the lattice and become donors. The other possibility is the formation of donor levels owing to the interaction of Li atoms with some lattice defects induced by neuron irradiation. Prime novelty: transmutation doping of diamond using reaction 10B (n, α) 7Li.