100°C 10 Gbit/s directly modulated InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure

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Bibliographic Details
Published inElectronics letters Vol. 42; no. 5; pp. 280 - 282
Main Authors IGA, R, KONDO, Y, TAKESHITA, T, KISHI, K, YUDA, M
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 02.03.2006
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser optical systems: design and operation
Lasers
Optics
Physics
Relaxation oscillations and long pulse operation
Semiconductor lasers; laser diodes
Relaxation oscillation
Buried heterostructures
Semiconductor lasers
Oscillation frequency
Distributed feedback lasers
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ISSN:0013-5194
1350-911X
DOI:10.1049/el:20064255