SOI MOS Technology for Spin Qubits

We fabricated Si Quantum Dot (QD) devices using relatively minor adaptations of a standard SOI CMOS process flow. We demonstrated that the spin of confined charges could be controlled via a local electrical-field excitation, owing in the caseof electrons to a geometrically-enabled tuning of the vall...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 93; no. 1; pp. 35 - 36
Main Authors Hutin, Louis, Bertrand, Benoit, Niquet, Yann-Michel, Hartmann, Jean-Michel, Sanquer, Marc, De Franceschi, Silvano, Meunier, Tristan, Vinet, Maud
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 22.10.2019
Electrochemical Society, Inc
Subjects
Physics
Online AccessGet full text

Cover

More Information
Summary:We fabricated Si Quantum Dot (QD) devices using relatively minor adaptations of a standard SOI CMOS process flow. We demonstrated that the spin of confined charges could be controlled via a local electrical-field excitation, owing in the caseof electrons to a geometrically-enabled tuning of the valley splitting and inter-valley spin-orbit coupling. We discuss improvement paths such as extending the spin coherence time by using epi-layers of nuclear-spin-free 28Si (99.992%) as a device template, and developing novel 3D architectures compatible with topological quantum error correction schemes.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/09301.0035ecst